Initial stages of the growth of CaF2 on Cu(111) visualized by STM

نویسندگان

  • F. Calleja
  • J. J. Hinarejos
  • S. Suturin
  • A. L. Vázquez de Parga
  • N. S. Sokolov
  • R. Miranda
چکیده

The epitaxial growth of insulators on semiconductor surfaces is a topic that has attracted widespread interest in recent years. In particular, a strong effort has been devoted to study the growth of CaF 2 on Si(111) and (100) surfaces [1] because of the potential interest for novel Si-based quantum effect devices, such as Resonant Tunnelling Diodes operating at 300 K [2]. Much less is known concerning the epitaxial growth of insulators on metal surfaces. We briefly report here on the early stages of the growth of CaF 2 on Cu(111), a highly mismatched system (the lattice parameters are 0.543 nm versus 0.361 nm) as visualized by STM. Deposition of 0.4 TL at 300 K produces initially the decoration of the steps of the substrate from the lower side. Once that the steps are saturated, islands irregular in shape and 1.2-1.9 nm in height (4-6 TL) nucleate at the terraces as shown in Figure 1. The density of islands on the terraces is 3 × 10 10 cm-2. The Cu(111) lattice can be atomically resolved in the patches of the surface between the islands, showing that, unlike Si(111) [1, 2], there is no CaF wetting layer with the Ca atoms bonded to Si, onto which the following molecules can grow epitaxially. Most of the CaF 2 molecules stay intact as they contact the Cu(111) surface and diffuse on it to nucleate and form the observed islands. There are, however, indications (not shown) of a very limited reaction between the Cu(111) substrate and the CaF 2 molecules in the form of some dark, triangular shaped defects of unknown nature, but not detected in the clean Cu(111) surface [3]. It is important to note that in order to decorate the steps of the Cu substrate, the diffusion length of CaF 2 molecules at 300 K has to be larger than the average distance between steps, i.e. 100 nm. Fig. 2 shows that increasing the amount of CaF 2 evaporated at 300 K to 1.7 TL simply increases the density of islands nucleated on the terraces to 1.2×10-11 cm-2 , but not their height, which is still 4-6 TL. The islands show rami¯ed or dendritic shapes, indicating that the diffusion along the steps at 300 K is not fast enough to produce islands with compact shapes. After deposition at 550 K the steps are still decorated but the islands at the terraces have now …

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Initial Oxidation of Cu(hkl) Surfaces Vicinal to Cu(111): A High- Throughput Study of Structure Sensitivity

The initial stage in the oxidation of Cu single crystal surfaces has been studied on a surface structure spread single crystal (SC) exposing a continuous distribution of all Cu(hkl) surface orientations lying within 10° polar angle of the (111) plane, Cu(111) ± 10°-SC. The uptake of oxygen across the Cu(111) ± 10°-SC during exposure to O2 at 300 K has been measured using spatially resolved X-ra...

متن کامل

Epitaxial growth mechanisms and structure of CaF2/Si(111).

The early stages of interface formation between CaF2 and Si(111)have been studied, in situ, by a combination of reflection high-energy electron diffraction, x-ray diffraction, and core-level photoemission. The results are combined with ex situ transmission-electron-microscopy measurements to show that the initial growth mode changes from Volmer-Weber to Stranski-Krastanow, depending on the subs...

متن کامل

Contrast in scanning probe microscopy images of ultra-thin insulator films

The contrast in scanning probe microscopy (SPM) images of ultra-thin CaF2 films epitaxially grown on Si(111) is studied using scanning tunneling microscopy (STM) and scanning force microscopy (SFM). STM images of CaF2/Si(111) exhibit a distinct contrast depending on the bias voltage. While images obtained with positive sample bias voltages show the physical topography of the film, images obtain...

متن کامل

Metal deposition on n-Si(111):H electrodes

Well-defined monohydride-terminated n-Si(111) electrodes were used to study electrodeposition of Pb and Cu as well as electroless Au deposition on these surfaces. With classical electrochemical methods, in-situ STM, ex-situ AFM, SEM and in-situ SXRD, the initial stages of metal deposition and the epitaxial properties of the metal deposit were investigated. © 2000 Elsevier Science Ltd. All right...

متن کامل

High resolution electrochemical STM: New structural results for underpotentially deposited Cu on Au(111) in acid sulfate solution

Adsorption of sulfate assists Cu monolayer underpotential deposition (upd) on Au(111) in a unique way, rendering two distinct structural stages: (i) formation of a low-density Cu phase at coverage of 2/3 ML known as the ffiffiffi 3 p ffiffiffi 3 p R30 or honeycomb phase; (ii) formation of a complete monolayer, i.e., Cu-(1 · 1) phase pseudomorphic with respect to underlying Au(111) substrate. In...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2004